Semiconductor memory device and semiconductor device group

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S156000, C365S185080

Reexamination Certificate

active

10988530

ABSTRACT:
A semiconductor device includes a first CMOS inverter, a second CMOS inverter, a first transfer transistor and a second transfer transistor wherein the first and second transfer transistors are formed respectively in first and second device regions defined on a semiconductor device by a device isolation region so as to extend in parallel with each other, the first transfer transistor contacting with a first bit line at a first bit contact region on the first device region, the second transfer transistor contacting with a second bit line at a second bit contact region on the second device region, wherein the first bit contact region is formed in the first device region such that a center of said the bit contact region is offset toward the second device region, and wherein the second bit contact region is formed in the second device region such that a center of the second bit contact region is offset toward the first device region.

REFERENCES:
patent: 5040146 (1991-08-01), Mattausch et al.
patent: 6229186 (2001-05-01), Ishida
patent: 6495899 (2002-12-01), Natsume
patent: 6559510 (2003-05-01), Yokoyama
patent: 2002/0024105 (2002-02-01), Ishida
patent: 2003/0067813 (2003-04-01), Nagamine et al.
patent: 197 31 956 (1998-08-01), None
patent: 5-225786 (1993-09-01), None
patent: 7-22590 (1995-01-01), None
patent: 2001-144192 (2001-05-01), None
patent: 2001-0051580 (2001-06-01), None
patent: 2001-0095151 (2001-11-01), None
European Search Report dated Feb. 27, 2006 issued in corresponding European Application No. 04027491.2.

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