Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-11-27
2007-11-27
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S226000, C365S189110, C365S189090, C365S230060, C365S149000
Reexamination Certificate
active
10507117
ABSTRACT:
A cell core unit and its peripheral circuit are driven by a relatively low voltage power supply. A constant voltage that does not depend on the power supply voltage is provided as a boosted voltage (VBOOST) to be supplied to a control signal for a word line of the cell core unit. A sense amplifier amplifies a higher voltage level of a bit line to the power supply voltage. Then, a circuit for generating a signal for defining the transition timing and/or the pulse width of a control signal from the peripheral circuit to the cell core unit performs signal delay using a delay circuit having a characteristic in which a delay time thereof decreases with reduction of the provided power supply voltage.
REFERENCES:
patent: 5086238 (1992-02-01), Watanabe et al.
patent: 5130564 (1992-07-01), Sin
patent: 5197033 (1993-03-01), Watanabe et al.
patent: 5222044 (1993-06-01), Tsujimoto
patent: 5264743 (1993-11-01), Nakagome et al.
patent: 5276843 (1994-01-01), Tillinghast et al.
patent: 5307315 (1994-04-01), Oowaki et al.
patent: 5363333 (1994-11-01), Tsujimoto
patent: 5377156 (1994-12-01), Watanabe et al.
patent: 5394077 (1995-02-01), Atsumi
patent: 5396116 (1995-03-01), Watanabe et al.
patent: 5398207 (1995-03-01), Tsuchida et al.
patent: 5426601 (1995-06-01), Agata et al.
patent: 5499209 (1996-03-01), Oowaki et al.
patent: 5555215 (1996-09-01), Nakagome et al.
patent: 5592421 (1997-01-01), Kaneko et al.
patent: 5822267 (1998-10-01), Watanabe et al.
patent: 6031779 (2000-02-01), Takahashi et al.
patent: 6125075 (2000-09-01), Watanabe et al.
patent: 6198683 (2001-03-01), Ishii et al.
patent: 6363029 (2002-03-01), Watanabe et al.
patent: 2002/0021159 (2002-02-01), Takahashi
patent: 2002/0033721 (2002-03-01), Tachimori
patent: 2-000350 (1990-01-01), None
patent: 2-214149 (1990-08-01), None
patent: 3-237682 (1991-10-01), None
patent: 3-273594 (1991-12-01), None
patent: 4-038786 (1992-02-01), None
patent: 4-078220 (1992-03-01), None
patent: 5-334875 (1993-12-01), None
patent: 6-282986 (1994-10-01), None
patent: 7-240094 (1995-09-01), None
patent: 8-340238 (1996-12-01), None
patent: 2002-050945 (2002-02-01), None
patent: 2002-124858 (2002-04-01), None
Hirota Takuya
Nakagawa Atsushi
Takahashi Hiroyuki
Foley & Lardner LLP
Hur J. H.
NEC Electronics Corporation
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