Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S185230, C365S182000, C365S188000
Reexamination Certificate
active
07929332
ABSTRACT:
The semiconductor memory device includes an initialization memory cell having a first inverter circuit including a first transistor and a second transistor, and a second inverter circuit whose input portion is connected to an output portion of the first inverter circuit and output portion is connected to an input portion of the first inverter circuit, and including a third transistor and a fourth transistor. An absolute value of a threshold voltage of the third transistor is smaller than that of the first transistor.
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Husch & Blackwell LLP
Nguyen Viet Q
Semiconductor Energy Laboratory Co,. Ltd.
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