Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition
Reexamination Certificate
2011-08-02
2011-08-02
Dudek, Jr., Edward (Department: 2186)
Electrical computers and digital processing systems: memory
Storage accessing and control
Specific memory composition
C711S167000, C711SE12002, C365S189011
Reexamination Certificate
active
07991945
ABSTRACT:
A semiconductor memory device, including: a cell array block including a plurality of memory cells arranged therein; and a controller, wherein the controller controls the semiconductor memory device so that: an operation of reading out data from a second region in the cell array block is initiated before completion of an operation of outputting data read out from a first region in the cell array block; and the data read out from the second region is output successively after the completion of the operation of outputting data read out from the first region.
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“Toshiba TH58NVG1S3AFT05: Tentative Toshiba MOS Digital Integrated Circuit Silicon Gate CMOS,” p. 1-32, May 19, 2003.
Iwanari Shunichi
Kotani Hisakazu
Matsuura Masanori
Dudek, Jr. Edward
McDermott Will & Emery LLP
Panasonic Corporation
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