Semiconductor memory device and refresh method for the same

Details Semiconductor memory device and refresh method for the same Semiconductor memory device and refresh method for the same

2007-06-19

2009-08-25

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S189090, C365S230060

Reexamination Certificate

active

07580308

ABSTRACT:
A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

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