Semiconductor memory device and process

Details Semiconductor memory device and process Semiconductor memory device and process

1993-02-18

1994-11-15

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257297, H01L 2702, H01L 2348, H01L 2940

Patent

active

053650956

ABSTRACT:
A semiconductor memory device with a storage capacitor is provided which accomplishes a large storage capacity together with a high component density, and facilitates the production. A switching transistor is formed locally in a semiconductor substrate. Formed over the transistor is an upper-level wire disposed over which is a storage capacitor. A storage capacitor contact passes through the upper-level wire. While ensuring a good capacity for the storage capacitor contact, the allowance of focus, too, can advantageously be obtained in simultaneously transferring a pattern of the upper-level wire onto the memory cell region as well as onto the peripheral circuit region. Particularly, by having the storage capacitor contact pass through a bit line, a drain and a source can symmetrically be arranged with a word line, like a memory cell with a bit-line-over-storage-capacitor organization cell. This eliminates an excess portion resulting in increasing the density.

REFERENCES:
patent: 4937645 (1990-06-01), Dotsuka
patent: 5095346 (1992-03-01), Bae et al.

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