Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-05-23
2006-05-23
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S189050, C257S315000, C257S316000
Reexamination Certificate
active
07050331
ABSTRACT:
The present invention provides a semiconductor memory device including a memory cell array in which a plurality of memory cells are arranged, a user interface circuit including a command queue having a logic circuit for accepting commands issued by an external user and generating a program memory address, and an array control circuit having a microcontroller and a program memory for storing therein an execution code, and executing an operation on the memory cell array, wherein the memory cell includes a gate electrode formed over a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional elements formed on both sides of the gate electrode and having the function of retaining charges.
REFERENCES:
patent: 5424979 (1995-06-01), Morii
patent: 5509134 (1996-04-01), Fandrich et al.
patent: 5541886 (1996-07-01), Hasbun
patent: 5692138 (1997-11-01), Fandrich et al.
Iwata Hiroshi
Matsuoka Nobuaki
Morikawa Yoshinao
Nawaki Masaru
Shibata Akihide
Dinh Son T.
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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