Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2011-03-29
2011-03-29
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S206000, C365S205000, C365S196000, C365S189020, C365S230020, C365S230060
Reexamination Certificate
active
07916559
ABSTRACT:
There is provided a semiconductor memory device including: a source strobe signal generating unit configured to generate a source strobe signal having a first or a second activation width corresponding to a normal mode and a bank grouping mode; a final strobe signal generating unit configured to, in the normal mode, expand the first activation width and generate a final strobe signal having the expanded first activation width, and in the bank grouping mode, maintain the second activation width and generate the final strobe signal having the second activation width; and a sense amplifying unit configured to sense, amplify and output data applied through a data line in response to the final strobe signal.
REFERENCES:
patent: 6166986 (2000-12-01), Kim
patent: 6965539 (2005-11-01), Lee
patent: 2008/0008011 (2008-01-01), Moon et al.
patent: 1020030049187 (2003-06-01), None
patent: 1020070091451 (2007-09-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 23, 2009.
Notice of Allowance issued from Korean Intellectual Property Office on Jan. 28, 2010.
Hynix / Semiconductor Inc.
IP & T Group LLP
Le Thong Q
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