Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-12-27
2010-11-23
Nguyen, Dang T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S230060, C365S233100
Reexamination Certificate
active
07839705
ABSTRACT:
A semiconductor memory device has a timing margin for internal operations. The semiconductor memory device can activate an internal control signal for controlling an external address sooner than an internal control signal for controlling an external command to secure a sufficient time for data access. The semiconductor memory device includes a command decoding circuit configured to decode an external command to output an internal command signal for an internal operation corresponding to the external command, a control circuit configured to generate a strobe signal for controlling the internal operation in response to the internal command signal and an internal address signal by decoding an address signal received from outside such that the internal address signal activates sooner than the strobe signal, and a column decoding circuit configured to generate a data access signal when both the internal address signal and the strobe signal are activated.
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patent: 6671787 (2003-12-01), Kanda et al.
patent: 7414899 (2008-08-01), Oh et al.
patent: 2000-222879 (2000-08-01), None
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Nguyen Dang T
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