Semiconductor memory device and module for high frequency...

Details Semiconductor memory device and module for high frequency... Semiconductor memory device and module for high frequency...

2006-12-01

2008-11-25

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Addressing

Sync/clocking

C365S233110, C365S233190

Reexamination Certificate

active

07457192

ABSTRACT:
The present invention relates to a synchronous semiconductor memory device with double data rate, and more particularly, to a synchronous semiconductor memory device for inputting and outputting data using a free-running clock and inserting a preamble indicative of start of data into the outputted data. A semiconductor memory device of the present invention receives a data read command from the exterior of the memory device in response to a predetermined clock signal inputted from the exterior, and outputting data including a preamble in response to the clock signal.

REFERENCES:
patent: 6151270 (2000-11-01), Jeong
patent: 6198674 (2001-03-01), Kim
patent: 6222792 (2001-04-01), Hanzawa et al.
patent: 6427197 (2002-07-01), Sato et al.
patent: 6807613 (2004-10-01), Keeth et al.
patent: 7251171 (2007-07-01), Nishimura et al.
patent: 2003/0218916 (2003-11-01), Kang

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