Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2008-03-18
2008-03-18
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S233100, C365S189070
Reexamination Certificate
active
11049732
ABSTRACT:
When a semiconductor memory device enters a refresh mode, retention times of memory cells are measured for each word line. A plurality of refresh cycles are set in correspondence to the retention times of the memory cells. According to the refresh cycles, the memory cells are refreshed.
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Elpida Memory Inc.
Lam David
Sughrue & Mion, PLLC
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