Semiconductor memory device and method of reading data

Details Semiconductor memory device and method of reading data Semiconductor memory device and method of reading data

2006-07-25

2006-07-25

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S204000, C365S205000

Reexamination Certificate

active

07082046

ABSTRACT:
A semiconductor memory device is characterized by including a bit line, a transistor coupled to the bit line, a ferroelectric memory cell coupled to the bit line via the transistor, a shift circuit coupled to the bit line to lower a data potential that appears on the bit line in response to data stored in the memory cell, and a sense amplifier coupled to the bit line and to a ground potential to amplify a potential difference between the data potential lowered by the shift circuit and the ground potential.

REFERENCES:
patent: 6031754 (2000-02-01), Derbenwick et al.
patent: 6046928 (2000-04-01), Takata
patent: 6233170 (2001-05-01), Yamada
patent: 6937499 (2005-08-01), Nordal et al.
patent: 2001/0040814 (2001-11-01), Takashima
patent: 2000-285682 (2000-10-01), None
patent: 2001-202776 (2001-07-01), None
patent: 2001-319472 (2001-11-01), None

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