Static information storage and retrieval – Powering
Reexamination Certificate
2011-07-12
2011-07-12
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Powering
C365S210100, C365S154000, C365S227000, C365S189090
Reexamination Certificate
active
07978559
ABSTRACT:
A semiconductor memory device includes a plurality of word lines, a plurality of pairs of bit lines and complementary bit lines that cross the word lines, and a plurality of memory cells, each memory cell being disposed at a region where a respective word line and a pair of a bit line and a complementary bit line cross each other. A voltage control unit includes a plurality of elements connected in series between a power voltage source and the memory cells and are switched on/off in response to a control signal that controls an operation of the plurality of memory cells. The voltage control unit controls the voltage of the power voltage source to a predetermined level, thereby obtaining a controlled voltage to be supplied to the memory cells.
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Kim Kyung-Woo
Yun Jong-Sin
F. Chau & Associates LLC
Ho Hoai V
Radke Jay
Samsung Electronics Co,. Ltd.
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