Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1997-04-02

1999-01-12

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257314, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058594590

ABSTRACT:
A semiconductor device comprising: a substrate, a gate insulating layer formed on the substrate, insulating isolation layers formed on each side of the gate insulating layer, an impurity diffusion region formed in the substrate beneath the insulating isolation layer, a first conductive layer formed on both the gate insulating layer and the insulating isolation layer, and an element splitting trench which split up at least the insulating isolation layer and the impurity diffusion layer into two parts respectively and form a trench in the substrate and is buried with conductive material.

REFERENCES:
patent: 5071782 (1991-12-01), Mori
patent: 5150178 (1992-09-01), Mori
patent: 5229631 (1993-07-01), Woo
patent: 5306940 (1994-04-01), Yamazaki
patent: 5432112 (1995-07-01), Hong

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