Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1982-01-29

1984-06-05

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365 51, G11C 1300

Patent

active

044532334

ABSTRACT:
A programmable semiconductor memory device with an emitter follower type poly-silicon fuse comprises: a first semiconductor region of first conductivity type; a first insulation layer for separating elements formed in the first semiconductor region; a second semiconductor region of second conductivity type connected to the first semiconductor region, and formed in an island fashion by the first insulation layer; a third semiconductor region of first conductivity type provided in the second semiconductor region; a poly-silicon wiring layer connected to the third semiconductor region and extending over the first insulation layer, the poly-silicon wiring layer containing high concentration impurity of first conductivity and serving as a fuse; a first insulating film formed on the surface of the poly-silicon wiring layer; a second insulating film formed on the side face of the poly-silicon wiring layer; and an electrode connected to the second semiconductor region through a contact hole formed in self-alignment with the second insulating film.

REFERENCES:
patent: 3653005 (1972-03-01), Porter
patent: 3835457 (1974-09-01), Yu
patent: 4084108 (1978-04-01), Fujimoto
Tang et al., "Sub-Nanosecond Self-Aligned I.sup.2 L/MTL Circuits", 1979 IEDM Tech. DIG. 201.

Affiliated with

Also associated with

Rating

Semiconductor memory device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1501613