Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2011-01-11

2011-01-11

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257SE45002

Reexamination Certificate

active

07868315

ABSTRACT:
A phase change memory device including plural memory cells is disclosed. Each of the memory cells includes memory transistors and phase change film portions formed above or below the memory transistors. The phase change film portions correspond to the respective memory transistors respectively. Vias are provided in order to connect each of the memory transistor in parallel to each of the phase change film portions in each of the memory cells. The vias connect the memory cells in series to one another.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 2003/0185086 (2003-10-01), Hoya et al.
patent: 2004/0174732 (2004-09-01), Morimoto
U.S. Appl. No. 12/408,249, filed Mar. 20, 2009, Tanaka, et al.
U.S. Appl. No. 12/504,959, filed Jul. 17, 2009, Tanaka, et al.
U.S. Appl. No. 12/562,402, filed Sep. 18, 2009, Tanaka, et al.

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