Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2008-01-29

2011-11-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE47001, C257SE27002

Reexamination Certificate

active

08049201

ABSTRACT:
A semiconductor memory device includes first conductive lines on a substrate, an interlayer insulating layer with a plurality of via holes on the substrate, second conductive lines on the interlayer insulating layer, and a resistive memory material in the via holes and electrically connected to the first and second conductive lines, the resistive memory material having a vertically non-uniform specific resistance profile with respect to the substrate.

REFERENCES:
patent: 6998697 (2006-02-01), Campbell et al.
patent: 7037762 (2006-05-01), Joo et al.
patent: 7658773 (2010-02-01), Pinnow
patent: 2008/0121862 (2008-05-01), Liu
patent: 10-2003-0087426 (2003-11-01), None
patent: 10-2006-0089401 (2005-08-01), None
patent: 10-2006-0008027 (2006-01-01), None
patent: 10-2006-0079455 (2006-07-01), None

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