Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29129
Reexamination Certificate
active
07986001
ABSTRACT:
A semiconductor memory device comprises: a plurality of transistors having a stacked-gate structure, each transistor including a semiconductor substrate, a gate insulator formed on the semiconductor substrate, a lower gate formed on the semiconductor substrate with the gate insulator interposed, an intergate insulator formed on the lower gate, and an upper gate formed and silicided on the lower gate with the intergate insulator interposed. A portion of the transistors has an aperture formed through the intergate insulator to connect the lower gate with the upper gate and further includes a silicide suppression region between the aperture and the gate insulator to suppress diffusion of metal atoms from the silicided upper gate.
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Omura et al., U.S. Appl. No. 12/244,523, filed Oct. 2, 2008, entitled “Semiconductor Memory Device and Method of Manufacturing the Same”.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Sengdara Vongsavanh
Tran Minh-Loan T
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