Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-21
2008-09-02
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S346000, C257S386000, C257S389000, C257SE29268, C257SE29269, C257SE29279
Reexamination Certificate
active
07420241
ABSTRACT:
A semiconductor memory device includes a memory cell which includes a first gate insulation film provided on the semiconductor substrate; a floating gate electrode provided on the first gate insulation film; a second gate insulation film provided on the floating gate electrode; a control gate electrode provided on the second gate insulation film; a source layer and a drain layer that are provided in the semiconductor substrate, the source layer and the drain layer respectively being provided either side of a channel region which is below the floating gate electrode; a source electrode that is electrically connected to the source layer; a buffer film provided on the drain layer; and a memory cell including a drain electrode electrically connected to the drain layer through the buffer film, wherein when viewing the surface of the semiconductor substrate from above, an overlapped area between the floating gate electrode and the drain layer is smaller than an overlapped area between the floating gate electrode and the source layer.
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Saito, et al., Mobility Reduction Due to Remote Charge Scattering in Al2O3/SiO2 Gate-Stacked MISFETs, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials, Nagoya, 2002, pp. 704-705.
Kaneko, et al., Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si/HlSiO/SiO2/Si, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003, pp. 56-57.
Amin Turocy & Calvin LLP
Kabushiki Kaisha Toshiba
Warren Matthew E
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