Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-07
2007-08-07
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S306000, C257S310000, C257SE27104, C257SE29343
Reexamination Certificate
active
11066162
ABSTRACT:
A semiconductor memory device includes a semi-conductor substrate, a MOS transistor formed on the semiconductor substrate and including a pair of impurity regions as a source and a drain, and a gate electrode, a first conductive plug formed in contact with an upper surface of one of the pair of impurity regions, and a planar ferroelectric capacitor formed by stacking a lower electrode layer, a ferroelectric layer and an upper electrode layer on the first conductive plug, a side face upper end of the first conductive plug being aligned with a corresponding part of a side face of the ferroelectric capacitor.
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Díaz José R.
Jackson Jerome
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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