Semiconductor memory device and method of manufacturing same

Details Semiconductor memory device and method of manufacturing same Semiconductor memory device and method of manufacturing same

1994-12-22

1996-06-04

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, G11C 1124

Patent

active

055239650

ABSTRACT:
Short and long sides of each of capacitors held by a semiconductor memory device are respectively made shorter and longer so that the capacitors are laid over memory cell regions adjacent to each other. Thus, large capacity type capacitors whose circumferential length increases and total capacitor area greatly increases can be obtained without so increasing plane areas of the capacitors.

REFERENCES:
patent: 5463577 (1995-10-01), Oowaki et al.
Spreaded-Vertical-Capacitor Cell (SVC) For Beyond 64MBit DRAMs by N. Matsuo, Y. Nakata, H. Ogawa, T. Yabu, S. Matsumoto, M. Sasago, K. Hashimoto, and S. Okada for Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., Moriguchi, Osaka 570, Japan.

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