Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2008-02-28
2010-10-12
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S182000, C365S185140, C365S185170, C365S230050
Reexamination Certificate
active
07813203
ABSTRACT:
A semiconductor memory device includes a plurality of active areas each extending in a first direction and including a memory cell string which includes select transistors and memory cells, current paths of which are connected in series, a first extension portion which is provided between one-side terminal end portions of two active areas neighboring in a second direction that crosses the first direction, and a second extension portion which is provided between other-side terminal end portions of the two active areas neighboring in the second direction, the first and second extension portions connecting the two active areas in a loop configuration.
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Arai Fumitaka
Kito Masaru
Sato Mitsuru
Bui Tha-O
Kabushiki Kaisha Toshiba
Luu Pho M
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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