Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate
2011-01-25
2011-01-25
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Format or disposition of elements
C365S063000, C365S053000
Reexamination Certificate
active
07876591
ABSTRACT:
A semiconductor memory device having a double-patterned memory cell array that includes a plurality of first bit lines spaced apart from each other and having a first pattern, a plurality of second bit lines spaced apart from each other and having a second pattern, the second bit lines being between the first bit lines to define an alternating array of first and second bit lines, the first and second patterns being different from each other, a first main memory cell array defined by a first portion of the alternating array, a second main memory cell array defined by a second portion of the alternating array, bit lines in the first main memory cell array having a substantially same regularity as bit lines in the second main memory cell array, and a dummy array between the first main memory cell array and the second main memory cell array.
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Lee & Morse P.C.
Nguyen Viet Q
Samsung Electronics Co,. Ltd.
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