Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

2006-03-07

2008-11-18

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S311000, C438S257000, C438S260000

Reexamination Certificate

active

07453116

ABSTRACT:
A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

REFERENCES:
patent: 4264376 (1981-04-01), Yatsuda et al.
patent: 6103572 (2000-08-01), Kirihara
patent: 6713388 (2004-03-01), Tseng et al.
patent: 6794694 (2004-09-01), Diodato et al.
patent: 55-30846 (1980-03-01), None
patent: 61-154174 (1986-07-01), None
patent: 61-288471 (1986-12-01), None
patent: 61-290771 (1986-12-01), None
patent: 10-284627 (1998-10-01), None
patent: 11-163072 (1999-06-01), None
patent: 2000-174126 (2000-06-01), None
patent: WO 94/10686 (1994-05-01), None
Office Action dated Jun. 17, 2008 issued in corresponding Japanese Application No. 2002-355933.

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