Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

1994-06-07

1996-06-11

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

365184, 365168, 365104, 257390, G11C 1134

Patent

active

055263062

ABSTRACT:
In order to improve the degree of storage data integration, side walls (32) are selectively formed on side surfaces of word lines (22) to serve as masks for changing ON-state current values of memory cells by changing widths or lengths of active regions (24) of the memory cells, thereby forming several of types of memory cells having different electrical properties. Storage data per memory cell is therefore so multivalued that the number of memory cells is reduced.

REFERENCES:
patent: 4990999 (1991-02-01), Oishi et al.
Robert Lineback, Four-state cell called density key, Jun. 30, 1982 pp. 81-82.
Nikkei Microdevices, Dec. 1993, pp. 128-129, Yohei Mochizuki, "64M Mask ROM/Sharp Corporation".

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