Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-09-25
2009-08-04
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S191000, C365S210120, C365S210130, C365S233100
Reexamination Certificate
active
07570531
ABSTRACT:
In a semiconductor memory device, in addition to a sense amplifier connected to bit lines of a memory cell array having a plurality of memory cells in a disconnectable manner, the sense amplifier performing confinement operation to disconnect the bit lines of the memory cell array and amplify a data signal during data sense operation from the memory cells, there is provided a timing adjustment circuit adjusting timing related to confinement operation in the sense amplifier, so as to allow adjusting of timing of the confinement operation and setting of timing of the confinement operation.
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Kobayashi Hiroyuki
Nakamura Toshikazu
Arent & Fox LLP
Fujitsu Microelectronics Limited
Luu Pho M.
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