Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2005-03-15
2005-03-15
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S149000, C365S226000, C365S233100
Reexamination Certificate
active
06868026
ABSTRACT:
An internal voltage generator when activated, generates an internal voltage to be supplied to an internal circuit. Operating the internal voltage generator consumes a predetermined amount of the power. In response to a control signal from the exterior, an entry circuit inactivates the internal voltage generator. When the internal voltage generator is inactivated, the internal voltage is not generated, thereby reducing the power consumption. By the control signal from the exterior, therefore, a chip can easily enter a low power consumption mode. The internal voltage generator is exemplified by a booster for generating the boost voltage of a word line connected with memory cells, a substrate voltage generator for generating a substrate voltage, or a precharging voltage generator for generating the precharging voltage of bit lines to be connected with the memory cells.
REFERENCES:
patent: 4688196 (1987-08-01), Inagaki et al.
patent: 5197026 (1993-03-01), Butler
patent: 5461338 (1995-10-01), Hirayama et al.
patent: 5570005 (1996-10-01), Hardee et al.
patent: 5986959 (1999-11-01), Itoh
patent: 6025707 (2000-02-01), Joo
patent: 6058061 (2000-05-01), Ooishi
patent: 6150850 (2000-11-01), Chun
patent: 6205079 (2001-03-01), Namekawa
patent: 6208577 (2001-03-01), Mullarkey
Arent & Fox PLLC
Fujitsu Limited
Yoha Connie C.
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