Static information storage and retrieval – Read/write circuit – Particular write circuit
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Particular write circuit
C365S185050
Reexamination Certificate
active
07872927
ABSTRACT:
A voltage generator that monitors a writing margin as a control amount in order to carry out an optimum power source control when control of a SRAM cell power source is carried out at writing operation, and always keeps the writing margin constant; and a power source selector are included to switch power source voltage at writing. By switching the power source voltage at writing, a semiconductor memory device in which a stable writing operation is achieved without largely deteriorating writing time in the SRAM cell and an ultrahigh speed operation or ultralow power operation can be carried out is obtained.
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K. Zhang, et al., “A 3-GHz 70Mb SRAM in 65nm CMOS Technology with Integrated Column-Based Dynamic Power Supply”, ISSCC Dig. Tech. Papers, Feb. 2005, pp. 474-475, IEEE.
M. Yamaoka, et al., “A 300MHz 25μA/Mb Leakage On-Chip SRAM Module Featuring Process-Variation Immunity and Low-Leakage-Active Mode for Mobile-Phone Application Processor”, ISSCC Dig. Tech. Papers, Feb. 2005, pp. 480-481, IEEE.
NEC Corporation
Nguyen Tuan T.
Sughrue & Mion, PLLC
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