Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2008-04-01
2008-04-01
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S185210, C365S196000, C365S207000
Reexamination Certificate
active
07352646
ABSTRACT:
A semiconductor memory device with improved operational performance by reducing the level variation of first and second power voltages applied to a sense amplifier by efficiently locating a decoupling capacitor. The decoupling capacitor is arranged on an empty region of a plurality of the first and second sense amplifiers and connected between the first and second power voltage lines. A plurality of global data I/O line pairs is arranged perpendicular to the direction of a plurality of local data I/O line pairs.
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English language abstract of Korean Publication No. 2003-0001242.
Choi Hyung-Chan
Kim Chi-wook
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Tran Anthan T
Zarabian Amir
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