Semiconductor memory device and method for the same

Details Semiconductor memory device and method for the same Semiconductor memory device and method for the same

2008-09-09

2008-09-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257SE29129

Reexamination Certificate

active

11848944

ABSTRACT:
A semiconductor substrate20, a gate electrode34, first and second impurity diffusion regions24aand24b, first and second variable-resistance regions22a,22b, first and second main electrodes36a,36b, first and second charge storing units40a,40bare included therein.The first and second charge storing units are configured by stacking layers in order from bottom oxide films41a,41bto charge storing nitride films42a,42bto top oxide films43a, 43b, respectively. At the same time, the distance between the first main electrode and the charge storing nitride film formed in the first charge storing unit is constant, and the distance between the second main electrode and the charge storing nitride film formed in the second charge storing unit is constant.

REFERENCES:
patent: 7211878 (2007-05-01), Ono et al.
patent: 2005/0157529 (2005-07-01), Iwata et al.
patent: 2006/0244070 (2006-11-01), Iwata et al.
patent: 2004-056089 (2004-02-01), None
patent: 2004-221546 (2004-08-01), None
patent: 2005-064295 (2005-03-01), None

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