Semiconductor memory device and method for programming and...

Details Semiconductor memory device and method for programming and... Semiconductor memory device and method for programming and...

2006-02-28

2006-02-28

Le, Thong Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S218000, C365S210130

Reexamination Certificate

active

07006371

ABSTRACT:
A semiconductor memory device comprises a memory array in which memory cells having variable resistive elements (R11to Rij) whose electrical resistance is varied by electrical stress and is held even after the electrical stress is released and selection transistors (T11to Tij) comprising N type MOSFETs are arranged with a matrix; programming means for applying the electrical stress to the variable resistive elements (R11to Rij) to program data into the memory cell; programming state detection means for detecting the variation in the electrical resistance at the time of the programming operation; and programming control means for stopping the application of the electrical stress when the electrical resistance is varied to a predetermined reference value. With this structure, it is possible to constitute the semiconductor memory device in which the time required for programming data is shortened and the programming precision is high.

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European Search Report mailed Oct. 4, 2005 for European Patent Application No. 03257632.4, 2 pages.

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