Semiconductor memory device and method for producing it

Details Semiconductor memory device and method for producing it Semiconductor memory device and method for producing it

1992-10-07

1994-07-12

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Semiconductive

G11C 1134

Patent

active

053294823

ABSTRACT:
In a semiconductor memory device, a first sidewall and a second sidewall are formed simultaneously for a memory cell section and a peripheral circuit section, and a high impurity concentration region is formed by being delimited by the second sidewall in the memory cell section, while a high impurity concentration section is formed by being delimited by the first sidewall in the peripheral circuit section. In this manner, MOS transistors having different LDD widths of the low impurity concentration regions and hence different characteristics, in which the MOS transistor of the memory cell section has improved voltage withstand properties and the MOS transistor of the peripheral circuit section has improved current driving capabilities, may be formed on the same substrate.

REFERENCES:
patent: 5091763 (1992-02-01), Sanchez
patent: 5173752 (1992-12-01), Motonami et al.

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