Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2009-06-19
2011-10-11
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S203000, C365S230060
Reexamination Certificate
active
08036026
ABSTRACT:
A semiconductor memory device includes a plurality of memory cells configured to store data having a polarity corresponding to a direction of current flowing through a source line and a bit line; and a precharge driving unit configured to precharge the bit line to a voltage corresponding to the data in response to a precharging signal before the data are stored in the memory cells.
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Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 29, 2010.
Notice of Allowance issued from Korean Intellectual Property Office on Jul. 29, 2011.
Rho Kwang-Myoung
Seo Woo-Hyun
Hynix / Semiconductor Inc.
IP & T Group LLP
Luu Pho M
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