Semiconductor memory device and method for operating the same

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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C365S203000, C365S230060

Reexamination Certificate

active

08036026

ABSTRACT:
A semiconductor memory device includes a plurality of memory cells configured to store data having a polarity corresponding to a direction of current flowing through a source line and a bit line; and a precharge driving unit configured to precharge the bit line to a voltage corresponding to the data in response to a precharging signal before the data are stored in the memory cells.

REFERENCES:
patent: 7057924 (2006-06-01), Lammers et al.
patent: 7057925 (2006-06-01), Ooishi et al.
patent: 7206222 (2007-04-01), Hidaka
patent: 7277330 (2007-10-01), Ooishi
patent: 7660176 (2010-02-01), Hur
patent: 2009/0073756 (2009-03-01), Yang
patent: 2009/0103354 (2009-04-01), Yoon et al.
patent: 100632942 (2006-10-01), None
patent: 1020080013018 (2008-02-01), None
patent: 1020090026183 (2009-03-01), None
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on Nov. 29, 2010.
Notice of Allowance issued from Korean Intellectual Property Office on Jul. 29, 2011.

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