Semiconductor memory device and method for manufacturing the sam

Details Semiconductor memory device and method for manufacturing the sam Semiconductor memory device and method for manufacturing the sam

1991-10-29

1994-03-08

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

437 52, 437 60, 437 43, H01L 2172

Patent

active

052933369

ABSTRACT:
A semiconductor memory device has a memory cell composed of a select MOS transistor and information storage capacitor and a peripheral circuit composed of a MOS transistor formed at a peripheral side of the memory cell, these transistors being formed in the surface portion of a first conductivity type semiconductor substrate. In the semiconductor memory device, the gate oxide film of the select MOS transistor is different in thickness from the gate oxide film of the MOS transistor of the peripheral circuit, the gate electrodes of these transistors being simultaneously formed.

REFERENCES:
patent: 5057449 (1991-10-01), Lowrey et al.
patent: 5083172 (1992-01-01), Kiyono
patent: 5104819 (1992-04-01), Feiberger et al.

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