Semiconductor memory device and method for manufacturing the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S110000

Reexamination Certificate

active

11311841

ABSTRACT:
A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.

REFERENCES:
patent: 6538272 (2003-03-01), Yamazaki et al.
patent: 6583507 (2003-06-01), Moon et al.
patent: 6730951 (2004-05-01), Nagano et al.
patent: 6734477 (2004-05-01), Moise et al.
patent: 6818935 (2004-11-01), Kweon et al.
patent: 6963097 (2005-11-01), Kweon
patent: 2002/0142488 (2002-10-01), Hong
patent: 2004/0235259 (2004-11-01), Celii et al.
patent: 2005/0101085 (2005-05-01), Ito et al.
patent: 2005/0106759 (2005-05-01), Hilliger et al.
patent: 2006/0118841 (2006-06-01), Eliason et al.
patent: 2006/0134808 (2006-06-01), Summerfelt et al.
patent: 2003-110095 (2003-04-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device and method for manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method for manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method for manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3807583

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.