Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2007-07-17
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S110000
Reexamination Certificate
active
11311841
ABSTRACT:
A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.
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Hasegawa Kazumasa
Iwasaki Yukihiro
Sawasaki Tatsuo
Fenty Jesse A.
Harness & Dickey & Pierce P.L.C.
Parker Kenneth
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