Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-03-06
2007-03-06
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S200000, C365S225700
Reexamination Certificate
active
10958572
ABSTRACT:
At first, failed cells are repaired using row redundancy or column redundancy as done in the past and then, for the remaining failed cells that cannot be repaired by row or column redundancy, by increasing the number of refreshes greater than that of normal cells, it is possible to repair more failed cells.
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Elpida Memory Inc.
Hoang Huan
Whitham Curtis Christofferson & Cook PC
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