Semiconductor memory device and method for manufacturing same

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

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C365S200000, C365S225700

Reexamination Certificate

active

10958572

ABSTRACT:
At first, failed cells are repaired using row redundancy or column redundancy as done in the past and then, for the remaining failed cells that cannot be repaired by row or column redundancy, by increasing the number of refreshes greater than that of normal cells, it is possible to repair more failed cells.

REFERENCES:
patent: 5644545 (1997-07-01), Fisch
patent: 02-187987 (1990-07-01), None
patent: 4-10297 (1992-01-01), None
patent: 06089571 (1994-03-01), None
patent: 11250694 (1999-09-01), None
patent: 2001-060400 (2001-03-01), None

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