Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

1995-08-29

1998-03-03

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257301, 257304, 257330, 257401, 257506, 257618, 437 34, 437141, 437228, 437235, 437913, H01L 2976, H01L 21465

Patent

active

057238898

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate, a first insulation film formed on the substrate, a trench formed in the substrate, an opening formed in the first insulation film above the trench, a capacitor including a dielectric film formed in the trench and a storage node formed in the trench on the dielectric film, a transfer transistor including a channel layer formed in the opening on the storage node, a gate insulation film formed on the channel layer, and a gate electrode formed on the gate insulation film, a second insulation film formed on the gate electrode, a conduction layer formed on the second insulation film, a third insulation film in contact with the channel layer, and a bit line in contact with the conduction layer.

REFERENCES:
patent: 5214296 (1993-05-01), Nakata et al.
patent: 5336917 (1994-08-01), Kohyama

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