Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

1993-09-14

1995-08-15

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

257301, 257303, 257350, H01L 2176

Patent

active

054425840

ABSTRACT:
A DRAM cell and a method for fabricating the same capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of elements. A capacitor structure is provided, which includes a common storage node formed at the inner wall of a trench, and two plate electrodes connected to each other in parallel, that is, a substrate and a polysilicon layer formed over the storage node via a second dielectric film and connected to the substrate in parallel. With such a capacitor structure, the capacitance per unit capacitor area can be maximized. A source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer. With this structure, a minimum information transmitting path is obtained, thereby enabling the overall structure and the fabrication therefor to be simplified. Furthermore, the present invention makes it easy to form an active region where elements are formed, without using an element isolation process. Accordingly, overall fabrication becomes simplified.

REFERENCES:
patent: 5027172 (1991-06-01), Jeon
patent: 5043778 (1991-08-01), Teng et al.
patent: 5079605 (1992-01-01), Blake
patent: 5102817 (1992-04-01), Chatterjee et al.
patent: 5144390 (1992-09-01), Matloubian
patent: 5187566 (1993-02-01), Yoshikawa et al.
patent: 5286663 (1994-02-01), Manning

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