Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-13
1999-05-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257315, 257316, H01L 29788
Patent
active
059006560
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate of a first conductivity-type, a first electrode formed on the semiconductor substrate for charging/discharging charges, a second electrode formed on the first electrode for controlling charging/discharging and data reading/writing of the first electrode, and a charge input/output stage formed on the semiconductor substrate on at least one side of the second electrode for supplying charges.
REFERENCES:
patent: 5265059 (1993-11-01), Wells et al.
patent: 5291046 (1994-03-01), Kumakura
patent: 5315546 (1994-05-01), Ochii
patent: 5365098 (1994-11-01), Miyamoto et al.
patent: 5734607 (1998-03-01), Sung et al.
patent: 5770877 (1998-06-01), Park
LG Semicon Co. Ltd.
Mintel William
LandOfFree
Semiconductor memory device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1871237