Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2006-05-19

2008-11-25

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

07456455

ABSTRACT:
A semiconductor memory device comprises: a first interlayer insulating film formed on a semiconductor substrate; a capacitor formed above the first interlayer insulating film and composed of a lower electrode, a capacitor insulating film of a high dielectric film or a ferroelectric film, and an upper electrode; a second interlayer insulating film formed over the first interlayer insulating film to cover the capacitor; a first contact plug formed in the first interlayer insulating film to penetrate the first interlayer insulating film; and a second contact plug formed in the second interlayer insulating film to penetrate the second interlayer insulating film to make connection to the first contact plug. Between the first and second contact plugs, a first oxygen barrier film is interposed to come into contact with part of the boundary area between the first and second interlayer insulating films.

REFERENCES:
patent: 7186569 (2007-03-01), Rinerson et al.
patent: 7190015 (2007-03-01), Natori et al.
patent: 2003/0143800 (2003-07-01), Hall et al.
patent: 10-242418 (1998-09-01), None

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