Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2005-06-14

2008-11-04

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257S401000, C257S413000

Reexamination Certificate

active

07446381

ABSTRACT:
A semiconductor memory device has a memory region which is formed on a semiconductor substrate and in which a plurality of memory cells each including a memory transistor are arranged as a matrix using a plurality of impurity diffusion layers (bit lines) and a plurality of gate electrodes (word lines) intersecting each other. The gate electrode of each of the memory transistors has an upper surface thereof formed into a protruding portion which is higher in level at the middle portion than at the edge portions. A silicide layer is formed on the upper surface of the protruding portion of the gate electrode of each of the memory transistors.

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Chinese Office Action (with English translation) issued in Chinese Patent Application No. CN 200510072638.7, dated May 16, 2008

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