Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-15
1998-06-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257316, 257295, H01L 29788
Patent
active
057708770
ABSTRACT:
A semiconductor memory device includes a semiconductor substrate of a first conductivity-type, a first electrode formed on the semiconductor substrate for charging/discharging charges, a second electrode formed on the first electrode for controlling charging/discharging and data reading/writing of the first electrode, and a charge input/output stage formed on the semiconductor substrate on at least one side of the second electrode for supplying charges.
REFERENCES:
patent: 5265059 (1993-11-01), Wells et al.
patent: 5291046 (1994-03-01), Kumakura
patent: 5315546 (1994-05-01), Ochii
patent: 5365098 (1994-11-01), Miyamoto et al.
Crane Sara W.
LG Semicon Co. Ltd.
Wille Douglas A.
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