Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-12-28
2009-11-03
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S204000
Reexamination Certificate
active
07613059
ABSTRACT:
A semiconductor memory device can stabilize a voltage level of a normal driving voltage terminal in a normal driving operation, which is performed after an overdriving operation, even when an overdriving voltage is unstable due to environmental factors of the semiconductor memory device in the overdriving operation. The semiconductor memory device includes a bit line sense amplifier for performing an amplification operation using a normal driving voltage or an overdriving voltage to sense and amplify data applied to bit lines, a normal driving voltage compensator configured to drive a normal driving voltage terminal according to a voltage level of the normal driving voltage terminal and target normal driving voltage levels, and a discharge enable signal generator configured to generate a discharge enable signal by adjusting an activation period of the discharge enable signal according to the overdriving voltage.
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Notice of Allowance issued from Korean Intellectual Property Office on Feb. 9, 2009 with an English Translation.
Hynix / Semiconductor Inc.
IP & T Law Firm PLC
Phung Anh
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