Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell
Reexamination Certificate
2005-02-22
2005-02-22
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Fet configuration adapted for use as static memory cell
Reexamination Certificate
active
06858949
ABSTRACT:
A memory cell array of a semiconductor memory device includes a first sub array configured by a plurality of first cell units, a second sub array configured by a plurality of second cell units, and a non-memory cell region used for a backgate and arranged between the two sub arrays. Memory cells located on each side of the non-memory cell region are oriented in the same direction. Pairs of bit lines have substantially the same number of bit line contacts.
REFERENCES:
patent: 6373107 (2002-04-01), Nikaido
patent: 08-274271 (1996-10-01), None
Arent Fox
Fujitsu Limited
Ho Tu-Tu
Nelms David
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