Static information storage and retrieval – Read/write circuit – For complementary information
Patent
1999-09-14
2000-05-16
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
For complementary information
36518901, 36518908, 365205, 36518903, 365191, G11C 700
Patent
active
060646055
ABSTRACT:
Two memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific write operation mode to associate a logic 1 of a write signal with a state in which an electric charge exists in each capacitor. Further, a logic 0 of the write signal is associated with a state in which no electric charge exists in the capacitor to write the same write signal. Two dynamic memory cells in different memory arrays are simultaneously selected in accordance with the designation of a specific read operation mode to associate a state in which an electric charge exists in a capacitor of each dynamic memory cell with a logic 1 of a read signal and associate a state in which no electric charge exists in the capacitor with a logic 0 of the read signal in response to a write operation. Thus, the logics 1 of the two read signals are preferentially output.
REFERENCES:
patent: 5426603 (1995-06-01), Nakamura et al.
patent: 5499213 (1996-03-01), Niimi et al.
patent: 5508960 (1996-04-01), Pinkhem
patent: 5511031 (1996-04-01), Grover et al.
patent: 5701269 (1997-12-01), Fujii
patent: 5796671 (1998-08-01), Wahlstrom
patent: 5818784 (1998-10-01), Muranaka et al.
patent: 5844841 (1998-12-01), Takeucii et al.
patent: 5844858 (1998-12-01), Kyung
patent: 5870218 (1999-02-01), Jyouno et al.
patent: 5969985 (1999-10-01), Tanaka et al.
patent: 5969996 (1999-10-01), Muranaka et al.
H. Yamauchi, et al., "FA 14/1 A Sub-0.5.mu. A/MB Data-Retention DRAM," 1995 IEEE International Solid-State Circuits Conference, pp. 244-249.
Kenmizaki Kanehide
Kitame Tetsuya
Miyatake Shin-ichi
Morino Makoto
Muranaka Masaya
Hitachi , Ltd.
Hitachi ULSI Engineering Corp.
Nguyen Viet Q.
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