Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-09
1995-11-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, 257401, 257503, H01L 2968, H01L 2940, H01L 2348
Patent
active
054710790
ABSTRACT:
Disclosed is a semiconductor memory device having such a structure that a voltage variation on a bit line does not affect a voltage on another bit line. A gate electrode portion branches and extends laterally from a word line and extends almost in parallel with the bit line. First and second impurity regions of a field effect transistor are formed in regions between adjacent word lines, with the gate electrode portion therebetween. A capacitor electrically connected to the second impurity region is formed to cover the bit lines. Since the capacitor is between adjacent bit lines, no voltage variation on one bit line affects a voltage on the other bit lines.
REFERENCES:
patent: 5177575 (1993-01-01), Ikeda
"A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-Line Structure" by Shin'ichiro Kimura et al, IEDM 88 (1988), pp. 596-599.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS" by T. Ema et al., IEDM 88 (1988), pp. 592-595.
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
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