Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2008-04-18

2010-10-05

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S239000, C438S257000, C438S264000, C438S297000, C257S298000, C257S300000, C257SE27103, C257SE27112, C257SE29300, C257SE21422, C257SE21680, C257SE21694, C365S185100, C365S184000

Reexamination Certificate

active

07807518

ABSTRACT:
The present invention provides a semiconductor memory device having a capacitor electrode of a MOS capacitor formed in polygon and slanting faces enlarged toward an insulating film are provided therearound. A floating gate electrode is provided which extends from over a channel region of a MOSEFT to over corners of ends on the MOSFET side, of the capacitor electrode and which is opposite to the channel region and the capacitor electrode with a gate insulating film interposed therebetween.

REFERENCES:
patent: 6611458 (2003-08-01), Ishibashi et al.
patent: 2007/0187755 (2007-08-01), Moore
patent: 2007/0228467 (2007-10-01), Kurachi
patent: 2009/0065838 (2009-03-01), Nagao
patent: 2001-229690 (2001-08-01), None

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