Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-05
2000-01-18
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
060159944
ABSTRACT:
A semiconductor memory device and a manufacturing method thereof are disclosed in which a reduction of the number of steps is made possible between the step of writing into ROM and the completion of the semiconductor memory device. In this semiconductor memory device, a high resistance polycrystalline silicon wiring region is provided at a portion of a source wiring connected to a source region of an MOS transistor. Accordingly, the MOS transistor can be turned OFF easily when a voltage of 3 V to 5 V is applied to that MOS transistor, without having to control its threshold voltage. In addition, if the manufacturing process for forming the high resistance wiring region in the source region is performed after the formation of a contact hole for an aluminum wiring for drains, the number of process steps is reduced between the step of writing into the ROM and completing the semiconductor memory device.
REFERENCES:
patent: 4592128 (1986-06-01), Bourassa
patent: 5049970 (1991-09-01), Tanaka et al.
Muller et al, Device Electronics for ICS, pp. 454-455, 1986.
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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