Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-04
2007-12-04
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
11084648
ABSTRACT:
The present invention provides a semiconductor memory device including: a semiconductor substrate of a first conductivity type; and a memory cell including: (i) a columnar semiconductor portion formed on the substrate, (ii) at least two charge-storage layers formed around a periphery of the columnar semiconductor portion and divided in a direction vertical to the semiconductor substrate, and (iii) a control gate that covers at least a portion of charge-storage layers, wherein the memory cell is capable of holding two-bit or more data.
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Annex to the European Search Report on European Patent Application No. 05251584.8 mailed on Nov. 7, 2005, four pages.
Horii Shinji
Masuoka Fujio
Tanigami Takuji
Yokoyama Takashi
Fujio Masuoka
Ha Nathan W
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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