Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-01
2008-01-01
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07315059
ABSTRACT:
The present invention provides a semiconductor memory device having one or more protruding semiconductor layers formed on a semiconductor substrate of a first conductivity type and a plurality of memory cells on surfaces of the protruding semiconductor layers, wherein each of the memory cells is formed of a charge storage layer, a control gate and an impurity diffusion layer of a second conductivity type which is formed in a portion of the protruding semiconductor layer and the plurality of memory cells is aligned to at least a predetermined direction, and the control gates of the plurality of memory cells is aligned to the predetermined direction are placed so as to be separated from each other.
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European Search Report dated May 25, 2007, directed to counterpart EP application 04253144.2 (4 pages).
Endoh Tetsuo
Horii Shinji
Masuoka Fujio
Takeuchi Noboru
Tanigami Takuji
Arena Andrew O.
Gurley Lynne
Masuoka Fujio
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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